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A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit

Tsuyoshi Funaki. A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit. In 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits, EMC Compo 2013, Nara, Japan, December 15-18, 2013. pages 113-118, IEEE, 2013. [doi]

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