Antara Ganguly, Sangeeta Goyal, Sneha Bhatia, Anuj Grover. New stable loadless 6T dual-port SRAM cell design. In 20th International Symposium on VLSI Design and Test, VDAT 2016, Guwahati, India, May 24-27, 2016. pages 1-6, IEEE, 2016. [doi]
@inproceedings{GangulyGBG16,
title = {New stable loadless 6T dual-port SRAM cell design},
author = {Antara Ganguly and Sangeeta Goyal and Sneha Bhatia and Anuj Grover},
year = {2016},
doi = {10.1109/ISVDAT.2016.8064859},
url = {https://doi.org/10.1109/ISVDAT.2016.8064859},
researchr = {https://researchr.org/publication/GangulyGBG16},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {20th International Symposium on VLSI Design and Test, VDAT 2016, Guwahati, India, May 24-27, 2016},
publisher = {IEEE},
isbn = {978-1-5090-1422-4},
}