Z. Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J. T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz. Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 51-1, IEEE, 2022. [doi]
@inproceedings{GaoCSMRMMZBSSLG22,
title = {Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier},
author = {Z. Gao and Francesca Chiocchetta and Carlo De Santi and Nicola Modolo and Fabiana Rampazzo and Matteo Meneghini and Gaudenzio Meneghesso and Enrico Zanoni and Hervé Blanck and H. Stieglauer and D. Sommer and Benoit Lambert and Jan Grünenpütt and O. Kordina and J. T. Chen and J.-C. Jacquet and Cedric Lacam and S. Piotrowicz},
year = {2022},
doi = {10.1109/IRPS48227.2022.9764531},
url = {https://doi.org/10.1109/IRPS48227.2022.9764531},
researchr = {https://researchr.org/publication/GaoCSMRMMZBSSLG22},
cites = {0},
citedby = {0},
pages = {51},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7950-9},
}