J. Gao, Y. Jin, B. Xie, C. P. Wen, Y. Hao, M. Wang. GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
@inproceedings{GaoJXWHW18,
title = {GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology},
author = {J. Gao and Y. Jin and B. Xie and C. P. Wen and Y. Hao and M. Wang},
year = {2018},
doi = {10.1109/DRC.2018.8442184},
url = {https://doi.org/10.1109/DRC.2018.8442184},
researchr = {https://researchr.org/publication/GaoJXWHW18},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
publisher = {IEEE},
isbn = {978-1-5386-3028-0},
}