Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix. Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-8, IEEE, 2023. [doi]

Abstract

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