A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)

Dae-Myeong Geum, Jinha Lim, Junho Jang, Seungyeop Ahn, Seongkwang Kim, Joonsup Shim, Bong-Ho Kim, Juhyuk Park, Woo Jin Baek, JaeYong Jeong, SangHyeon Kim. A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%). In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 413-414, IEEE, 2022. [doi]

Abstract

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