Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET - researchr publication authors

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G. Ghidini, A. Garavaglia, G. Giusto, A. Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, D. Ielmini. Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. Microelectronics Reliability, 43(8):1221-1227, 2003. [doi]

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