Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET

G. Ghidini, A. Garavaglia, G. Giusto, A. Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, D. Ielmini. Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. Microelectronics Reliability, 43(8):1221-1227, 2003. [doi]

@article{GhidiniGGGBPSCI03,
  title = {Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET},
  author = {G. Ghidini and A. Garavaglia and G. Giusto and A. Ghetti and R. Bottini and D. Peschiaroli and M. Scaravaggi and F. Cazzaniga and D. Ielmini},
  year = {2003},
  doi = {10.1016/S0026-2714(03)00175-6},
  url = {http://dx.doi.org/10.1016/S0026-2714(03)00175-6},
  tags = {reliability},
  researchr = {https://researchr.org/publication/GhidiniGGGBPSCI03},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {43},
  number = {8},
  pages = {1221-1227},
}