Design and Test Challenges in Resistive Switching RAM (ReRAM): An Electrical Model for Defect Injections

Olivier Ginez, Jean Michel Portal, Ch. Muller. Design and Test Challenges in Resistive Switching RAM (ReRAM): An Electrical Model for Defect Injections. In 14th IEEE European Test Symposium, ETS 2009, Sevilla, Spain, May 25-29, 2009. pages 61-66, IEEE Computer Society, 2009. [doi]

@inproceedings{GinezPM09,
  title = {Design and Test Challenges in Resistive Switching RAM (ReRAM): An Electrical Model for Defect Injections},
  author = {Olivier Ginez and Jean Michel Portal and Ch. Muller},
  year = {2009},
  doi = {10.1109/ETS.2009.23},
  url = {http://doi.ieeecomputersociety.org/10.1109/ETS.2009.23},
  tags = {testing, design},
  researchr = {https://researchr.org/publication/GinezPM09},
  cites = {0},
  citedby = {0},
  pages = {61-66},
  booktitle = {14th IEEE European Test Symposium, ETS 2009, Sevilla, Spain, May 25-29, 2009},
  publisher = {IEEE Computer Society},
  isbn = {978-0-7695-3703-0},
}