A novel 4T asymmetric single-ended SRAM cell in sub-32 nm double gate technology - researchr publication authors

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Bastien Giraud, Amara Amara. A novel 4T asymmetric single-ended SRAM cell in sub-32 nm double gate technology. In International Symposium on Circuits and Systems (ISCAS 2008), 18-21 May 2008, Sheraton Seattle Hotel, Seattle, Washington, USA. pages 1906-1909, IEEE, 2008. [doi]

This author has not been identified. Look up 'Bastien Giraud' in GoogleThis author has not been identified. Look up 'Amara Amara' in Google

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