Bastien Giraud, Amara Amara. A novel 4T asymmetric single-ended SRAM cell in sub-32 nm double gate technology. In International Symposium on Circuits and Systems (ISCAS 2008), 18-21 May 2008, Sheraton Seattle Hotel, Seattle, Washington, USA. pages 1906-1909, IEEE, 2008. [doi]
@inproceedings{GiraudA08:0,
title = {A novel 4T asymmetric single-ended SRAM cell in sub-32 nm double gate technology},
author = {Bastien Giraud and Amara Amara},
year = {2008},
doi = {10.1109/ISCAS.2008.4541815},
url = {http://dx.doi.org/10.1109/ISCAS.2008.4541815},
researchr = {https://researchr.org/publication/GiraudA08%3A0},
cites = {0},
citedby = {0},
pages = {1906-1909},
booktitle = {International Symposium on Circuits and Systems (ISCAS 2008), 18-21 May 2008, Sheraton Seattle Hotel, Seattle, Washington, USA},
publisher = {IEEE},
}