A novel 4T asymmetric single-ended SRAM cell in sub-32 nm double gate technology

Bastien Giraud, Amara Amara. A novel 4T asymmetric single-ended SRAM cell in sub-32 nm double gate technology. In International Symposium on Circuits and Systems (ISCAS 2008), 18-21 May 2008, Sheraton Seattle Hotel, Seattle, Washington, USA. pages 1906-1909, IEEE, 2008. [doi]

Abstract

Abstract is missing.