Roman Golman, Robert Giterman, Odem Harel, Adam Teman. Improved Read Access in GC-eDRAM Memory by Dual-Negative Word-Line Technique. In IEEE International Symposium on Circuits and Systems, ISCAS 2020, Sevilla, Spain, October 10-21, 2020. pages 1-5, IEEE, 2020. [doi]
Abstract is missing.