The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors

N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan. The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors. Microelectronics Reliability, 41(9-10):1391-1396, 2001.

Abstract

Abstract is missing.