Ton J. Mouthaan - researchr alias

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Viewing Publication 1 - 13 from 13

2008

CreaTe: A New Programme to Attract Engineers as Design ArtistsZsófia Ruttkay, Ton J. Mouthaan. delta 2008: 592-596 [doi]

2006

Internationalisation of Masters education; globalisation at workTon J. Mouthaan, Anke Kohl. delta 2006: 113-115 [doi]

2005

A 3-D Circuit Model to evaluate CDM performance of ICsM. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper. mr, 45(9-11):1425-1429, 2005. [doi]

2004

A Case Study of a Microsystems MSc CurriculumTon J. Mouthaan. delta 2004: 146-148 [doi]

2003

Competence-Based EE-Learning: (How) Can We Implement It?Ton J. Mouthaan, Wouter Olthuis, Henk Vos. mse 2003: 33-34 [doi]

Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategyM. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper. mr, 43(9-11):1569-1575, 2003. [doi]

2002

2001

Investigations on double-diffused MOS transistors under ESD zap conditionsGianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper. mr, 41(3):395-405, 2001. [doi]

The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistorsN. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan. mr, 41(9-10):1391-1396, 2001.

1996

Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structuresBenno H. Krabbenborg, A. Bosma, H. C. de Graaff, Ton J. Mouthaan. tcad, 15(7):765-774, 1996. [doi]

1994

Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devicesPhilip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan. tcad, 13(3):293-302, 1994. [doi]

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