Cora Salm - researchr alias

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Viewing Publication 1 - 13 from 13

2020

Effect of Ambient on the Recovery of Hot-Carrier Degraded DevicesMaurits J. de Jong, Cora Salm, Jurriaan Schmitz. irps 2020: 1-6 [doi]

2018

Towards understanding recovery of hot-carrier induced degradationMaurits J. de Jong, Cora Salm, Jurriaan Schmitz. mr, 88:147-151, 2018. [doi]

2017

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETsMaurits J. de Jong, Cora Salm, Jurriaan Schmitz. mr, 76:136-140, 2017. [doi]

2008

Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chipCora Salm, Victor M. Blanco Carballo, Joost Melai, Jurriaan Schmitz. mr, 48(8-9):1139-1143, 2008. [doi]

2007

2006

Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETsCora Salm, A. J. Hof, Fred G. Kuper, J. Schmitz. mr, 46(9-11):1617-1622, 2006. [doi]

2005

A 3-D Circuit Model to evaluate CDM performance of ICsM. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper. mr, 45(9-11):1425-1429, 2005. [doi]

2004

Plasma Charging Damage Reduction in IC Processing by A Self-balancing InterconnectZhichun Wang, Jan Ackaert, Cora Salm, Fred G. Kuper, Eddy De Backer. mr, 44(9-11):1503-1507, 2004. [doi]

2003

Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategyM. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper. mr, 43(9-11):1569-1575, 2003. [doi]

2002

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