Hardening a memory cell for low power operation by gate leakage reduction - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Jianping Gong, Yong-Bin Kim, Fabrizio Lombardi, Jie Han. Hardening a memory cell for low power operation by gate leakage reduction. In 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012, Austin, TX, USA, October 3-5, 2012. pages 73-78, IEEE Computer Society, 2012. [doi]

This author has not been identified. Look up 'Jianping Gong' in GoogleThis author has not been identified. Look up 'Yong-Bin Kim' in GoogleThis author has not been identified. Look up 'Fabrizio Lombardi' in GoogleThis author has not been identified. Look up 'Jie Han' in Google

runs on WebDSL