Hardening a memory cell for low power operation by gate leakage reduction

Jianping Gong, Yong-Bin Kim, Fabrizio Lombardi, Jie Han. Hardening a memory cell for low power operation by gate leakage reduction. In 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012, Austin, TX, USA, October 3-5, 2012. pages 73-78, IEEE Computer Society, 2012. [doi]

Abstract

Abstract is missing.