16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors - researchr publication authors

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Laurent Grenouillet, Niccolo Castellani, Alain Persico, V. Meli, S. Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, S. Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, T. Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, J. Arcamone, E. Nowak. 16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]

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