Laurent Grenouillet, Niccolo Castellani, Alain Persico, V. Meli, S. Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, S. Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, T. Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, J. Arcamone, E. Nowak. 16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{GrenouilletCPMM21,
title = {16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors},
author = {Laurent Grenouillet and Niccolo Castellani and Alain Persico and V. Meli and S. Martin and Olivier Billoint and R. Segaud and Stefania Bernasconi and C. Pellissier and Carine Jahan and Christelle Charpin-Nicolle and P. Dezest and Catherine Carabasse and Paul Besombes and S. Ricavy and N. P. Tran and A. Magalhaes-Lucas and A. Roman and C. Boixaderas and T. Magis and Messaoud Bedjaoui and M. Tessaire and A. Seignard and F. Mazen and S. Landis and Elisa Vianello and Gabriel Molas and Fred Gaillard and J. Arcamone and E. Nowak},
year = {2021},
doi = {10.1109/IMW51353.2021.9439607},
url = {https://doi.org/10.1109/IMW51353.2021.9439607},
researchr = {https://researchr.org/publication/GrenouilletCPMM21},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021},
publisher = {IEEE},
isbn = {978-1-7281-8517-0},
}