Yuriy M. Greshishchev, Tingjun Wen, Naim Ben Hamida, Jorge Aguirre, Sadok Aouini, Marinette Besson, Robert Gibbins, Young Gouk Cho, Jerry Lam, Douglas McPherson, Mahdi Parvizi. A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOS. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{GreshishchevWBA19,
title = {A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOS},
author = {Yuriy M. Greshishchev and Tingjun Wen and Naim Ben Hamida and Jorge Aguirre and Sadok Aouini and Marinette Besson and Robert Gibbins and Young Gouk Cho and Jerry Lam and Douglas McPherson and Mahdi Parvizi},
year = {2019},
doi = {10.1109/BCICTS45179.2019.8972740},
url = {https://doi.org/10.1109/BCICTS45179.2019.8972740},
researchr = {https://researchr.org/publication/GreshishchevWBA19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0586-4},
}