Simulation of microcrack effects in dissolution of positive resist exposed by X-ray lithography

Roberto Guerrieri, Andrew R. Neureuther. Simulation of microcrack effects in dissolution of positive resist exposed by X-ray lithography. IEEE Trans. on CAD of Integrated Circuits and Systems, 7(7):755-764, 1988. [doi]

@article{GuerrieriN88,
  title = {Simulation of microcrack effects in dissolution of positive resist exposed by X-ray lithography},
  author = {Roberto Guerrieri and Andrew R. Neureuther},
  year = {1988},
  doi = {10.1109/43.3946},
  url = {http://doi.ieeecomputersociety.org/10.1109/43.3946},
  researchr = {https://researchr.org/publication/GuerrieriN88},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
  volume = {7},
  number = {7},
  pages = {755-764},
}