Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu. The influence of 1 nm AlN interlayer on properties of the Al::0.3::Ga::0.7::N/AlN/GaN HEMT structure. Microelectronics Journal, 39(5):777-781, 2008. [doi]
Abstract is missing.