Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator

Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang. Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. In 2017 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017, Irvine, CA, USA, November 13-16, 2017. pages 780-785, IEEE, 2017. [doi]

@inproceedings{GuoWYHRWLHGCXH17,
  title = {Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator},
  author = {Shaofeng Guo and Runsheng Wang and Zhuoqing Yu and Peng Hao and Pengpeng Ren and Yangyuan Wang and Siyu Liao and Chunyi Huang and Tianlei Guo and Alvin Chen and Jushan Xie and Ru Huang},
  year = {2017},
  doi = {10.1109/ICCAD.2017.8203856},
  url = {https://doi.org/10.1109/ICCAD.2017.8203856},
  researchr = {https://researchr.org/publication/GuoWYHRWLHGCXH17},
  cites = {0},
  citedby = {0},
  pages = {780-785},
  booktitle = {2017 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017, Irvine, CA, USA, November 13-16, 2017},
  publisher = {IEEE},
  isbn = {978-1-5386-3093-8},
}