Low Leakage Highly Stable Robust Ultra Low Power 8T SRAM Cell - researchr publication authors

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Neha Gupta, Tanisha Gupta, Sajid Khan, Abhinav Vishwakarma, Santosh Kumar Vishvakarma. Low Leakage Highly Stable Robust Ultra Low Power 8T SRAM Cell. In Anirban Sengupta, Sudeb Dasgupta, Virendra Singh, Rohit Sharma, Santosh Kumar Vishvakarma, editors, VLSI Design and Test - 23rd International Symposium, VDAT 2019, Indore, India, July 4-6, 2019, Revised Selected Papers. Volume 1066 of Communications in Computer and Information Science, pages 643-654, Springer, 2019. [doi]

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