Neha Gupta, Tanisha Gupta, Sajid Khan, Abhinav Vishwakarma, Santosh Kumar Vishvakarma. Low Leakage Highly Stable Robust Ultra Low Power 8T SRAM Cell. In Anirban Sengupta, Sudeb Dasgupta, Virendra Singh, Rohit Sharma, Santosh Kumar Vishvakarma, editors, VLSI Design and Test - 23rd International Symposium, VDAT 2019, Indore, India, July 4-6, 2019, Revised Selected Papers. Volume 1066 of Communications in Computer and Information Science, pages 643-654, Springer, 2019. [doi]
@inproceedings{GuptaGKVV19,
title = {Low Leakage Highly Stable Robust Ultra Low Power 8T SRAM Cell},
author = {Neha Gupta and Tanisha Gupta and Sajid Khan and Abhinav Vishwakarma and Santosh Kumar Vishvakarma},
year = {2019},
doi = {10.1007/978-981-32-9767-8_53},
url = {https://doi.org/10.1007/978-981-32-9767-8_53},
researchr = {https://researchr.org/publication/GuptaGKVV19},
cites = {0},
citedby = {0},
pages = {643-654},
booktitle = {VLSI Design and Test - 23rd International Symposium, VDAT 2019, Indore, India, July 4-6, 2019, Revised Selected Papers},
editor = {Anirban Sengupta and Sudeb Dasgupta and Virendra Singh and Rohit Sharma and Santosh Kumar Vishvakarma},
volume = {1066},
series = {Communications in Computer and Information Science},
publisher = {Springer},
isbn = {978-981-32-9767-8},
}