Amratansh Gupta, Mohit Ganeriwala, Nihar Ranjan Mohapatra. An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors. In 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems, VLSID 2019, Delhi, India, January 5-9, 2019. pages 163-167, IEEE, 2019. [doi]
@inproceedings{GuptaGM19,
title = {An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors},
author = {Amratansh Gupta and Mohit Ganeriwala and Nihar Ranjan Mohapatra},
year = {2019},
doi = {10.1109/VLSID.2019.00047},
url = {https://doi.org/10.1109/VLSID.2019.00047},
researchr = {https://researchr.org/publication/GuptaGM19},
cites = {0},
citedby = {0},
pages = {163-167},
booktitle = {32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems, VLSID 2019, Delhi, India, January 5-9, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0409-6},
}