An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors - researchr publication

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Amratansh Gupta, Mohit Ganeriwala, Nihar Ranjan Mohapatra. An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors. In 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems, VLSID 2019, Delhi, India, January 5-9, 2019. pages 163-167, IEEE, 2019. [doi]

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