45nm Bit-Interleaving Differential 10T Low Leakage FinFET Based SRAM with Column-Wise Write Access Control - researchr publication authors

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Vishal Gupta, Saurabh Khandelwal, Jimson Mathew, Marco Ottavi. 45nm Bit-Interleaving Differential 10T Low Leakage FinFET Based SRAM with Column-Wise Write Access Control. In 2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018, Chicago, IL, USA, October 8-10, 2018. pages 1-6, IEEE Computer Society, 2018. [doi]

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