Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7

Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Dmitry Yakimets, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene. Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 256-259, IEEE, 2017. [doi]

Abstract

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