A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array - researchr publication authors

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Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, Hoi-Jun Yoo. A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array. IEEE Trans. Circuits Syst. II Express Briefs, 69(5):2433-2437, 2022. [doi]

This author has not been identified. Look up 'Sangwoo Ha' in GoogleThis author has not been identified. Look up 'Sangjin Kim' in GoogleThis author has not been identified. Look up 'Donghyeon Han' in GoogleThis author has not been identified. Look up 'Soyeon Um' in GoogleThis author has not been identified. Look up 'Hoi-Jun Yoo' in Google

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