Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, Hoi-Jun Yoo. A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array. IEEE Trans. Circuits Syst. II Express Briefs, 69(5):2433-2437, 2022. [doi]
@article{HaKHUY22,
title = {A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array},
author = {Sangwoo Ha and Sangjin Kim and Donghyeon Han and Soyeon Um and Hoi-Jun Yoo},
year = {2022},
doi = {10.1109/TCSII.2022.3159808},
url = {https://doi.org/10.1109/TCSII.2022.3159808},
researchr = {https://researchr.org/publication/HaKHUY22},
cites = {0},
citedby = {0},
journal = {IEEE Trans. Circuits Syst. II Express Briefs},
volume = {69},
number = {5},
pages = {2433-2437},
}