Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification

Daniel B. Habersat, Aivars J. Lelis, Ronald Green. Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-4, IEEE, 2020. [doi]

Abstract

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