Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka. 230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020. pages 1-4, IEEE, 2020. [doi]
@inproceedings{HamadaTPNIMSN20,
title = {230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology},
author = {Hiroshi Hamada and Takuya Tsutsumi and Adam Pander and Masahito Nakamura and Go Itami and Hideaki Matsuzaki and Hiroki Sugiyama and Hideyuki Nosaka},
year = {2020},
doi = {10.1109/BCICTS48439.2020.9392976},
url = {https://doi.org/10.1109/BCICTS48439.2020.9392976},
researchr = {https://researchr.org/publication/HamadaTPNIMSN20},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020},
publisher = {IEEE},
isbn = {978-1-7281-9749-4},
}