Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

Dae-Hee Han, Huiseong Han, Shun'ichiro Ohmi. Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering. IEICE Electronic Express, 10(18):20130651, 2013. [doi]

Abstract

Abstract is missing.