Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs

Sangwook Han, David D. Wentzloff. Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs. IEEE Trans. VLSI Syst., 22(9):2025-2029, 2014. [doi]

Abstract

Abstract is missing.