A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current - researchr publication authors

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Satoru Hanzawa, Naoki Kitai, Kenichi Osada, Akira Kotabe, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura, Masahiro Moniwa, Takayuki Kawahara. A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current. In 2007 IEEE International Solid-State Circuits Conference, ISSCC 2007, Digest of Technical Papers, San Francisco, CA, USA, February 11-15, 2007. pages 474-616, IEEE, 2007. [doi]

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