Satoru Hanzawa, Naoki Kitai, Kenichi Osada, Akira Kotabe, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura, Masahiro Moniwa, Takayuki Kawahara. A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current. In 2007 IEEE International Solid-State Circuits Conference, ISSCC 2007, Digest of Technical Papers, San Francisco, CA, USA, February 11-15, 2007. pages 474-616, IEEE, 2007. [doi]
@inproceedings{HanzawaKOKMMTMK07,
title = {A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current},
author = {Satoru Hanzawa and Naoki Kitai and Kenichi Osada and Akira Kotabe and Yuichi Matsui and Nozomu Matsuzaki and Norikatsu Takaura and Masahiro Moniwa and Takayuki Kawahara},
year = {2007},
doi = {10.1109/ISSCC.2007.373500},
url = {http://dx.doi.org/10.1109/ISSCC.2007.373500},
researchr = {https://researchr.org/publication/HanzawaKOKMMTMK07},
cites = {0},
citedby = {0},
pages = {474-616},
booktitle = {2007 IEEE International Solid-State Circuits Conference, ISSCC 2007, Digest of Technical Papers, San Francisco, CA, USA, February 11-15, 2007},
publisher = {IEEE},
isbn = {1-4244-0853-9},
}