Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS

Jifa Hao, Yuhang Sun, Amartya Ghosh. Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

Abstract is missing.