2 oxide film including polysilicon gate depletion: validation with an EEPROM memory cell

Nadia Harabech, Rachid Bouchakour, Pierre Canet, Philippe Pannier, J. P. Sorbier. 2 oxide film including polysilicon gate depletion: validation with an EEPROM memory cell. In IEEE International Symposium on Circuits and Systems, ISCAS 2000, Emerging Technologies for the 21st Century, Geneva, Switzerland, 28-31 May 2000, Proceedings. pages 441-444, IEEE, 2000. [doi]

Abstract

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