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Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa. Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier. Microelectronics Journal, 38(12):1268-1272, 2007. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave AmplificationZon Fazlila Mohd Ahir, Ahmad Zarif Zulkifli, Abdul Manaf Hashim. asiams 2008: 990-993 [doi] Integration of interdigital-gated plasma wave device for proximity communication system applicationAbdul Manaf Hashim, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa. mj, 38(12):1263-1267, 2007. [doi] Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna DeviceNorfarariyanti Bte Parimon, Siti Suhaila Bte Mohd Yusof, Abdul Manaf Bin Hashim. asiams 2008: 987-989 [doi]
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