Interfacial transition layer in thermally grown SiO2 film on 4H-SiC

Ryu Hasunuma. Interfacial transition layer in thermally grown SiO2 film on 4H-SiC. In 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017, Austin, TX, USA, May 23-25, 2017. pages 1-4, IEEE, 2017. [doi]

Abstract

Abstract is missing.