Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs - researchr publication authors

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K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys. Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. Microelectronics Reliability, 45(9-11):1376-1381, 2005. [doi]

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