E. Simoen - researchr alias

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Viewing Publication 1 - 9 from 9

2010

SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistorsJ. Martín-Martínez, E. Amat, M. B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen. mr, 50(9-11):1263-1266, 2010. [doi]

2006

2005

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETsK. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys. mr, 45(9-11):1376-1381, 2005. [doi]

2001

Reliability of polycrystalline silicon thin film resistorsM. Nakabayashi, H. Ohyama, E. Simoen, M. Ikegami, C. Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara. mr, 41(9-10):1341-1346, 2001.

Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particleH. Ohyama, E. Simoen, S. Kuroda, C. Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, H. Sunaga. mr, 41(1):79-85, 2001. [doi]

Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiationH. Ohyama, M. Nakabayashi, E. Simoen, C. Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi. mr, 41(9-10):1443-1448, 2001.

Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOSM. Da Rold, E. Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere. mr, 41(12):1933-1938, 2001. [doi]

2000

A New Method to Extract the Silicon Film Thickness of Enhancement Mode Fully Depleted SOIN MOSFETsA. S. Nicolett, João A. Martino, E. Simoen, C. Claeys, Marcelo Bellodi, M. A. Pavanello, A. S. Nicolett. latw 2012: 264-267

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