Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. RafĂ­, A. Mercha, E. Simoen, C. Claeys. Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectronics Reliability, 46(9-11):1731-1735, 2006. [doi]

Abstract

Abstract is missing.