K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys. Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectronics Reliability, 46(9-11):1731-1735, 2006. [doi]
@article{HayamaTSORMSC06,
title = {Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation},
author = {K. Hayama and K. Takakura and K. Shigaki and H. Ohyama and J. M. Rafí and A. Mercha and E. Simoen and C. Claeys},
year = {2006},
doi = {10.1016/j.microrel.2006.07.063},
url = {http://dx.doi.org/10.1016/j.microrel.2006.07.063},
tags = {C++},
researchr = {https://researchr.org/publication/HayamaTSORMSC06},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {46},
number = {9-11},
pages = {1731-1735},
}