Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs - researchr publication

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J. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys. Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectronics Reliability, 46(9-11):1657-1663, 2006. [doi]

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