Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris. Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. Microelectronics Reliability, 44(9-11):1721-1726, 2004. [doi]

@article{HayamaTOMSCRK04,
  title = {Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation},
  author = {Kiyoteru Hayama and Kenichiro Takakura and Hidenori Ohyama and Abdelkarim Mercha and Eddy Simoen and Cor Claeys and Joan Marc Rafí and Michael Kokkoris},
  year = {2004},
  doi = {10.1016/j.microrel.2004.07.063},
  url = {http://dx.doi.org/10.1016/j.microrel.2004.07.063},
  researchr = {https://researchr.org/publication/HayamaTOMSCRK04},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {44},
  number = {9-11},
  pages = {1721-1726},
}