The following publications are possibly variants of this publication:
- Electrical characteristics of high-energy proton irradiated ultra-thin gate oxidesJ. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C. Martínez, M. Ullán. mr, 42(9-11):1501-1504, 2002. [doi]
- Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETsK. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys. mr, 45(9-11):1376-1381, 2005. [doi]
- Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETsJ. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys. mr, 46(9-11):1657-1663, 2006. [doi]