C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations

Yifan He, Yuxuan Huang, Jinshan Yue, Wenyu Sun, Lu Zhang, Yongpan Liu. C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations. In IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022. pages 3279-3283, IEEE, 2022. [doi]

@inproceedings{HeHYSZL22,
  title = {C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations},
  author = {Yifan He and Yuxuan Huang and Jinshan Yue and Wenyu Sun and Lu Zhang and Yongpan Liu},
  year = {2022},
  doi = {10.1109/ISCAS48785.2022.9937513},
  url = {https://doi.org/10.1109/ISCAS48785.2022.9937513},
  researchr = {https://researchr.org/publication/HeHYSZL22},
  cites = {0},
  citedby = {0},
  pages = {3279-3283},
  booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-8485-5},
}